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INTEGRATED CIRCUITS
SA5209 Wideband variable gain amplifier
Product specification Replaces data of 1990 Aug 20 IC17 Data Handbook 1997 Nov 07
Philips Semiconductors
Philips Semiconductors
Product specification
Wideband variable gain amplifier
SA5209
DESCRIPTION
The SA5209 represents a breakthrough in monolithic amplifier design featuring several innovations. This unique design has combined the advantages of a high speed bipolar process with the proven Gilbert architecture. The SA5209 is a linear broadband RF amplifier whose gain is controlled by a single DC voltage. The amplifier runs off a single 5 volt supply and consumes only 40mA. The amplifier has high impedance (1k) differential inputs. The output is 50 differential. Therefore, the 5209 can simultaneously perform AGC, impedance transformation, and the balun functions. The dynamic range is excellent over a wide range of gain setting. Furthermore, the noise performance degrades at a comparatively slow rate as the gain is reduced. This is an important feature when building linear AGC systems.
PIN CONFIGURATION
N, D PACKAGES
VCC1 GND1 INA GND1 INB GND1 VBG VAGC 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 VCC2 GND2 OUTA GND2 OUTB GND2 GND2 GND2
SR00237
Figure 1. Pin Configuration
FEATURES
* Gain to 1.5GHz * 850MHz bandwidth * High impedance differential input * 50 differential output * Single 5V power supply * 0 - 1V gain control pin * >60dB gain control range at 200MHz * 26dB maximum gain differential * Exceptional VCONTROL / VGAIN linearity * 7dB noise figure minimum * Full ESD protection * Easily cascadable
ORDERING INFORMATION
DESCRIPTION 16-Pin Plastic Small Outline (SO) package 16-Pin Plastic Dual In-Line Package (DIP)
APPLICATIONS
* Linear AGC systems * Very linear AM modulator * RF balun * Cable TV multi-purpose amplifier * Fiber optic AGC * RADAR * User programmable fixed gain block * Video * Satellite receivers * Cellular communications
TEMPERATURE RANGE -40 to +85C -40 to +85C
ORDER CODE SA5209D SA5209N
DWG # SOT109-1 SOT38-4
1997 Nov 07
2
853-1453 18663
Philips Semiconductors
Product specification
Wideband variable gain amplifier
SA5209
ABSOLUTE MAXIMUM RATINGS
SYMBOL VCC PD TJMAX TSTG Supply voltage Power dissipation, TA = 25oC (still air)1 16-Pin Plastic DIP 16-Pin Plastic SO Maximum operating junction temperature Storage temperature range PARAMETER RATING -0.5 to +8.0 1450 1100 150 -65 to +150 UNITS V mW mW
C C
NOTES: 1. Maximum dissipation is determined by the operating ambient temperature and the thermal resistance, JA: 16-Pin DIP: JA = 85C/W 16-Pin SO: JA = 110C/W
RECOMMENDED OPERATING CONDITIONS
SYMBOL VCC TA TJ Supply voltage Operating ambient temperature range SA Grade Operating junction temperature range SA Grade PARAMETER RATING VCC1 = VCC2 = 4.5 to 7.0V -40 to +85 -40 to +105 UNITS V
C C
DC ELECTRICAL CHARACTERISTICS
TA = 25oC, VCC1 = VCC2 = +5V, VAGC = 1.0V, unless otherwise specified. LIMITS SYMBOL PARAMETER TEST CONDITIONS DC tested Over temperature1 DC tested, RL = 10k Over temperature1 DC tested, RL = 10k Over temperature1 DC tested at 50A Over temperature1 DC tested at 1mA Over temperature1 MIN 38 30 17 16 23 22 0.9 0.8 40 35 +20 VOS Out ut Output offset voltage (out ut referred) (output Over temperature1 1.6 VIN DC level on in uts inputs Over temperature1 1.4 1.9 VOUT DC level on out uts outputs Output offset supply rejection ratio (output referred) Bandgap reference voltage g g Over temperature1 Over temperature1 1.7 20 15 1.2 1.1 1.32 1.45 1.55 45 dB 2.4 2.0 60 1.2 25 19 TYP 43 MAX 48 55 21 22 27 28 1.5 1.7 75 90 100 250 2.4 2.6 2.9 3.1 V V k UNIT
ICC AV AV RIN
Supply current Voltage gain (single ended in/single ended out) (single-ended in/single-ended Voltage gain (single ended in/differential out) (single-ended
mA dB dB
Input resistance (single-ended) In ut
ROUT
Out ut Output resistance (single-ended)
mV
PSRR
VBG
4.5VV
1997 Nov 07
3
Philips Semiconductors
Product specification
Wideband variable gain amplifier
SA5209
DC ELECTRICAL CHARACTERISTICS
TA = 25oC, VCC1 = VCC2 = +5.0V, VAGC = 1.0V, unless otherwise specified. LIMITS SYMBOL RBG VAGC IBAGC PARAMETER Bandgap loading AGC DC control voltage range AGC pin DC bias current in TEST CONDITIONS Over temperature1 Over temperature1 MIN 2 TYP 10 0-1.3 -0.7 -6 -10 MAX UNIT k V A
0VNOTES: 1. "Over Temperature Range" testing is as follows: SA is -40 to +85C At the time of this data sheet release, the D package over-temperature data sheet limits are guaranteed via guardbanded room temperature testing only.
AC ELECTRICAL CHARACTERISTICS
TA = 25oC, VCC1 = VCC2 = +5.0V, VAGC = 1.0V, unless otherwise specified. LIMITS SYMBOL PARAMETER TEST CONDITIONS MIN 600 BW -3dB bandwidth Over temperature1 500 +0.4 +0.6 200 RL = 50 RL = 1k RS = 50, f = 50MHz f = 100MHz f = 100MHz 400 1.9 9.3 2.5 -60 0.3 RL = 50 0.013 2 20 f = 100MHz f = 100MHz, VAGC =0.1V f = 100MHz, VAGC >0.5V f = 100MHz, VAGC <0.5V f = 100MHz, VAGC = 1V -3 -10 +13 +5 0.1 dB mVP-P mVP-P VP-P dB nV/Hz dB dB/V dB/C pF MHz dBm dBm dBm dBm dB TYP 850 MHz MAX UNIT
DC - 500MHz GF VIMAX VOMAX NF VIN-EQ S12 G/VCC G/T CIN BWAGC PO-1dB PI-1dB IP3OUT IP3IN GAB Gain flatness Maximum input voltage swing (single-ended) for linear operation2 Maximum output voltage swing (single-ended) for linear operation2 Over temperature1
Noise figure (unmatched configuration) Equivalent input noise voltage spectral density Reverse isolation Gain supply sensitivity (single-ended) Gain temperature sensitivity Input capacitance (single-ended) -3dB bandwidth of gain control function 1dB gain compression point at output 1dB gain compression point at input Third-order intercept point at output Third-order intercept point at input Gain match output A to output B
NOTE: 1. "Over Temperature Range" testing is as follows: SA is -40 to +85C At the time of this data sheet release, the D package over-temperature data sheet limits are guaranteed via guardbanded room temperature testing only. 2. With RL > 1k, overload occurs at input for single-ended gain < 13dB and at output for single-ended gain > 13dB. With RL = 50, overload occurs at input for single-ended gain < 6dB and at output for single-ended gain > 6dB.
1997 Nov 07
4
Philips Semiconductors
Product specification
Wideband variable gain amplifier
SA5209
SA5209 APPLICATIONS
The SA5209 is a wideband variable gain amplifier (VGA) circuit which finds many applications in the RF, IF and video signal processing areas. This application note describes the operation of the circuit and several applications of the VGA. The simplified equivalent schematic of the VGA is shown in Figure 2. Transistors Q1-Q6 form the wideband Gilbert multiplier input stage which is biased by current source I1. The top differential pairs are biased from a buffered and level-shifted signal derived from the VAGC input and the RF input appears at the lower differential pair. The circuit topology and layout offer low input noise and wide bandwidth. The second stage is a differential transimpedance stage with current feedback which maintains the wide bandwidth of the input stage. The output stage is a pair of emitter followers with 50 output impedance. There is also an on-chip bandgap reference with buffered output at 1.3V, which can be used to derive the gain control voltage. Both the inputs and outputs should be capacitor coupled or DC isolated from the signal sources and loads. Furthermore, the two inputs should be DC isolated from each other and the two outputs should likewise be DC isolated from each other. The SA5209 was designed to provide optimum performance from a 5V power source. However, there is some range around this value (4.5 - 7V) that can be used. The input impedance is about 1k. The main advantage to a differential input configuration is to provide the balun function. Otherwise, there is an advantage to common mode rejection, a specification that is not normally important to RF designs. The source impedance can be chosen for two different performance characteristics: Gain, or noise performance. Gain optimization will be realized if the input impedance is matched to about 1k. A 4:1 balun will provide such a broadband match from a 50 source. Noise performance will be optimized if the input impedance is matched to about 200. A 2:1 balun will provide such a broadband match from a 50 source. The minimum noise figure can then be expected to be about 7dB. Maximum gain will be about 23dB for a single-ended output. If the differential output is used and properly matched, nearly 30dB can be realized. With gain optimization, the noise figure will degrade to about 8dB. With no matching unit at the input, a 9dB noise figure can be expected from a 50 source. If the source is terminated, the noise figure will increase to about 15dB. All these noise figures will occur at maximum gain. The SA5209 has an excellent noise figure vs gain relationship. With any VGA circuit, the noise performance will degrade with decreasing
VCC R1 R2
gain. The 5209 has about a 1.2dB noise figure degradation for each 2dB gain reduction. With the input matched for optimum gain, the 8dB noise figure at 23dB gain will degrade to about a 20dB noise figure at 0dB gain. The SA5209 also displays excellent linearity between voltage gain and control voltage. Indeed, the relationship is of sufficient linearity that high fidelity AM modulation is possible using the SA5209. A maximum control voltage frequency of about 20MHz permits video baseband sources for AM. A stabilized bandgap reference voltage is made available on the SA5209 (Pin 7). For fixed gain applications this voltage can be resistor divided, and then fed to the gain control terminal (Pin 8). Using the bandgap voltage reference for gain control produces very stable gain characteristics over wide temperature ranges. The gain setting resistors are not part of the RF signal path, and thus stray capacitance here is not important. The wide bandwidth and excellent gain control linearity make the SA5209 VGA ideally suited for the automatic gain control (AGC) function in RF and IF processing in cellular radio base stations, Direct Broadcast Satellite (DBS) decoders, cable TV systems, fiber optic receivers for wideband data and video, and other radio communication applications. A typical AGC configuration using the SA5209 is shown in Figure 3. Three SA5209s are cascaded with appropriate AC coupling capacitors. The output of the final stage drives the full-wave rectifier composed of two UHF Schottky diodes BAT17 as shown. The diodes are biased by R1 and R2 to VCC such that a quiescent current of about 2mA in each leg is achieved. An SA5230 low voltage op amp is used as an integrator which drives the VAGC pin on all three SA5209s. R3 and C3 filter the high frequency ripple from the full-wave rectified signal. A voltage divider is used to generate the reference for the non-inverting input of the op amp at about 1.7V. Keeping D3 the same type as D1 and D2 will provide a first order compensation for the change in Schottky voltage over the operating temperature range and improve the AGC performance. R6 is a variable resistor for adjustments to the op amp reference voltage. In low cost and large volume applications this could be replaced with a fixed resistor, which would result in a slight loss of the AGC dynamic range. Cascading three SA5209s will give a dynamic range in excess of 60dB. The SA5209 is a very user-friendly part and will not oscillate in most applications. However, in an application such as with gains in excess of 60dB and bandwidth beyond 100MHz, good PC board layout with proper supply decoupling is strongly recommended.
R3 Q7 A1 Q8 Q1 Q2 Q3 Q4 R4 I2 OUTB OUTA
50
I3
50
VAGC 0-1V
+ - INB Q5 Q6 BANDGAP REFERENCE I1
INA
VBG
SR00238
Figure 2. Equivalent Schematic of the VGA 1997 Nov 07 5
Philips Semiconductors
Product specification
Wideband variable gain amplifier
SA5209
RF/IF INPUT
5209
5209
5209 VCC R1
AGC OUTPUT
R2
R1
= R2 R3 R4 R5 R6 = =
= = = = =
3.9k 360 62k 100 1k pot
R4
L1
L2
D1 C4 - 5230 + BAT 17 C3
D2
2fL1 L1
10k L2 R6
R3
D3 R5 BAT 17 VCC
SR00239
Figure 3. AGC Configuration Using Cascaded SA5209s
10F
0.1F
0.1F V 1 VCC1 VCC2 16
+ VCC 5VDC
2
GND1
GND2
15
VIN 50 0.1F
3
INA
OUTA
14 0.1F
OUTA
4
GND1
GND2
13
0.1F
5
INB
OUTB
12 0.1F
OUTB
6
GND1
GND2
11
7
VBG
GND2
10
8
VAGC
GND2
9
(16-Pin SO, 150-mil wide)
SR00240
Figure 4. VGA AC Evaluation Board
+5V 50 SOURCE 5209 MINI CIRCUITS 2:1 BALUN OR SIMILAR 50 OUTPUT
50 1:2 +1V VAGC
This circuit will exhibit about a 7dB noise figure with approximately 22dB gain.
SR00241
Figure 5. Broadband Noise Optimization 1997 Nov 07 6
Philips Semiconductors
Product specification
Wideband variable gain amplifier
SA5209
+5V 2:1 TURNS RATIO LC TUNED TRANSFORMER 50 SOURCE 5209 50 VAGC 50 OUTPUT This circuit will exhibit about a 7dB noise figure with approximately 22dB gain. Narrowband circuits have the advantage of greater stability, particularly when multiple devices are cascaded.
+1V
SR00242
Figure 6. Narrowband Noise Optimization
+5V 50 SOURCE 5209 1:4 VAGC +1V 50 MINI CIRCUITS 4:1 BALUN OR EQUIVALENT 50 OUTPUT This circuit will exhibit about an 8dB noise figure with 24dB gain.
SR00243
Figure 7. Broadband Gain Optimization
+5V 4:1 TURNS RATIO LC TUNED TRANSFORMER 50 SOURCE 5209 50 VAGC +1V 50 OUTPUT This circuit will exhibit approximately an 8dB noise figure and 25dB gain.
SR00244
Figure 8. Narrowband Gain Optimization
+5V 50 SOURCE 50 5209 50 VAGC +1V 50 OUTPUT The noise figure of this configuration will be approximately 15dB.
SR00245
Figure 9. Simple Amplifier Configuration
+5V 50 SOURCE 5209 50 VAGC +1V 50 OUTPUT With the 50 source left unterminated, the noise figure is 9dB.
SR00246
Figure 10. Unterminated Configuration
1997 Nov 07
7
Philips Semiconductors
Product specification
Wideband variable gain amplifier
SA5209
+5V 50 SOURCE 5209 VAGC VBG R1 R2 50 where VAGC = 50 OUTPUT Gain = 19dB + 20log10 VAGC
R2 V R 1 ) R 2 BG
SR00247
and is in units of Volts, for VAGC 1V
Figure 11. User-Programmable Fixed Gain Block
+5V FULL CARRIER AM (DSB) 50 OUTPUT 5209 50 VAGC .5V R 9R +5V All harmonic distortion products will be at least -50dBc over the audio spectrum.
RF INPUT 50 SOURCE
MODULATING SIGNAL
SR00248
Figure 12. AM Modulator
50 CRYSTAL FILTER 5209 5209 5209 OUTPUT
50 VAGC VAGC VAGC
The high input impedance to the NE5209 makes matching to crystal filters relatively easy. The total delta gain of this system will approach 80dB. IF frequencies well into the UHF region can be configured with this type of architecture.
GAIN CONTROL SIGNAL
SR00249
Figure 13. Receiver AGC IF Gain
VCC (+5V, unless otherwise noted) RS
VS
RT
5209 RL
RL
RT
VAGC
SR00250
Figure 14. Test Set-up 1 (Used for all Graphs)
1997 Nov 07
8
Philips Semiconductors
Product specification
Wideband variable gain amplifier
SA5209
10 9 8 7 S21 Magnitude 6 5 4 3 2 1 0 0 0.2 0.4 0.6 0.8 VAGC (V) 1 1.2 DC Tested See test-setup 1 T = 25C RS = RL = 50 Rt = f = 10MHz VCC = 5.5V VCC = 5.0V VCC = 4.5V Differential Voltage Gain (dB)
20 19.5 5.5V 19 18.5 18 17.5 17 16.5 16 15.5 15 -100 -50 0 50 Temperature (C) 100 150 RS = 0 RL = Rt = VAGC = 1.1V See Test Setup 1 5.0V 4.5V
SR00251
SR00252
Figure 15. Gain vs VAGC and VCC
10 9 50 8 +125C 7 6 S 21 Magnitude 5 4 3 2 1 20 0 0 0.2 0.4 0.6 VAGC (V) 0.8 1 1.2 RS = RL = 50 Rt = See test-setup 1 Supply Current (mA) 45 -55C +25C 55
Figure 17. Voltage Gain vs Temperature and VCC
VCC = 7.0V VCC = 6.0V
40 VCC = 5.0V 35 VCC = 4.5V
30
25 See test-setup 1
-100
-50
0
50
100
150
Temperature (C)
SR00253
SR00254
Figure 16. Insertion Gain vs VAGC and Temperature
Figure 18. Supply Current vs Temperature and VCC
1997 Nov 07
9
Philips Semiconductors
Product specification
Wideband variable gain amplifier
SA5209
1.5 1.45 1.4 1.35 Input Resistance (k ) 1.3 1.25 1.2 1.15 1.1 1.05 1 -100 -50 0 50 Temperature (C) 100 150 DC Tested See test-setup 1 VCC = 7.0V Output DC Voltage VCC = 4.5V
5 VCC = 7.0V 4.5 4 VCC = 6.0V 3.5 3 VCC = 5.0V 2.5 VCC = 4.5V 2 1.5 1 0.5 0 -100 -50 0 50 100 150 Temperature (C) DC Tested See test-setup 1
SR00255
SR00256
Figure 19. Input Resistance vs Temperature
Figure 21. Output Bias Voltage vs Temperature and VCC
2.5
2.5
2 DC OUTPUT SWING (V) VCC = 7.0V VCC = 6.0V VCC = 5.0V VCC = 4.5V
2
Input Bias Voltage (V)
1.5
1.5
1
1
VAGC = 1.1V RL = 10k DC Tested See test-setup 1
0.5 0.5 DC Tested See test-setup 1 0 0 -100 -100 -50 0 50 Temperature (C) 100 150 -50 0 50 100 150 Temperature (C)
SR00257
SR00258
Figure 20. Input Bias Voltage vs Temperature
Figure 22. DC Output Swing vs Temperature
1997 Nov 07
10
Philips Semiconductors
Product specification
Wideband variable gain amplifier
SA5209
16 20 1.1V 14 0.8V 10 0.4V S21 Magnitude (dB) S21 Magnitude (dB) 200mV 100mV -10 50mV 25mV -20 T = 25C RS = RL = 50 Rt = 50 See Test Setup 1 1000 1500 10 12 VCC = 7.0V VCC = 6.0V VCC = 5.0V VCC = 4.5V
0
8 T = 25C VAGC = 1.1V Rt = 50 f = 10MHz See Test Setup 1
6
4
2
0 -100 -50 0 50 100 150 Temperature (C)
-30 10 100 Frequency (MHz)
SR00259
SR00260
Figure 23. Insertion Gain vs Frequency and VAGC
Figure 25. Insertion Gain vs Temperature and VCC
15 5.5V
0
4.5V -5 10 S21 Magnitude (dB)
5
S22 (dB)
-10
125C -15 25C -55C -20 RS = RL = 50 Rt = 50 See Test Setup 1 -25
0
T = 25C VAGC = 1.1V RS = RL = 50 Rt = 50 See Test Setup 1
-5 10 100 Frequency (MHz) 1000 1500
10
100 Frequency (MHz)
1000 1500
SR00261
SR00262
Figure 24. Insertion Gain vs Frequency and VCC
Figure 26. Output Return Loss vs Frequency
1997 Nov 07
11
Philips Semiconductors
Product specification
Wideband variable gain amplifier
SA5209
0 -10 -20 S Magnitude (dB) 12 -30 -40 -50 -60 -70 -80 -90 1000 1500 100 10 T = 25C RS = RL = 50 Rt = 50 See test-setup 1 IM 3 Intercept (dBm)
15 OUTPUT
10
T = 25C RS = RL = 50 Rt = 50 f = 100MHz See test-setup 1
5
0
INPUT
-5 0 0.2 0.4 0.6 0.8 1 VAGC (V)
Frequency (MHz)
SR00263
SR00264
Figure 27. Reverse Isolation vs Frequency
Figure 29. Third-Order Intermodulation Intercept vs VAGC
0 OUTPUT -5
20 18 16 14 12
-10 P (dBm) -1 NF (dB)
-15 T = 25C RS = RL = 50 Rt = 50 f = 100MHz See test-setup 1
INPUT
10 8 6 4 T = 25C RS = RL = 50 Rt = f = 50MHz See test-setup 1
-20
-25 2 -30 0 0.2 0.4 0.6 VAGC (V) 0.8 1 0 0 0.2
0.4 0.6 VAGC (V)
0.8
1
SR00265
SR00266
Figure 28. 1dB Gain Compression vs VAGC
Figure 30. Noise Figure vs VAGC
1997 Nov 07
12
Philips Semiconductors
Product specification
Wideband variable gain amplifier
SA5209
16
12
14 10 12 0 Termination on INB S Magnitude (dB) 21 8
10 NF (dB) 50 Termination on INB
8
6
6 T = 25C VAGC = 1.1V RS = RL = 50 Rt = on INA See test-setup 1
4
4
2
2
RS = RL = 50 Rt = 50 R1 = R2 = 10k f = 100MHz See Figure 10
0 10 100 Frequency (MHz) 1000 0 -60 -10 40 Temperature (C) 90 140
SR00267
SR00268
Figure 31. Noise Figure vs Frequency
Figure 33. Fixed Gain vs Temperature
1.4 VCC = 7.0V VCC = 6.0V VCC = 5.0V VCC = 4.5V
1.35
+VCC GND
1.3 Bandgap Voltage (V) 1.25
INA
1.2
OUTA
1.15
1.1 Bandgap Load = 2k 1.05 1 -100 -50 0 50 Temperature (C) 100 150
INB
GND AGC VBG
NE5209 OUTB
TOP VIEW - COMPONENT SIDE
SR00269
Figure 32. Bandgap Voltage vs Temperature and VCC
TOP VIEW - SOLDER SIDE Figure 34. VGA AC Evaluation Board Layout
SR00270
1997 Nov 07
13
Philips Semiconductors
Product specification
Wideband variable gain amplifier
SA5209
+VCC
GND
OUTA
INA NE5209 INB
OUTB
TOP VIEW - COMPONENT SIDE
TOP VIEW - SOLDER SIDE Figure 35. AGC Configuration Using Cascaded SA5209s - Layout
SR00271
AMP10101 / NE5219SO/DN8.90 TOP VIEW - COMPONENT SIDE TOP VIEW - SOLDER SIDE
SR00272
Figure 36. VGA AC Evaluation Board Layout (DIP Package)
1997 Nov 07
14
Philips Semiconductors
Product specification
Wideband variable gain amplifier
SA5209
SO16: plastic small outline package; 16 leads; body width 3.9 mm
SOT109-1
1997 Nov 07
15
Philips Semiconductors
Product specification
Wideband variable gain amplifier
SA5209
DIP16: plastic dual in-line package; 16 leads (300 mil)
SOT38-4
1997 Nov 07
16
Philips Semiconductors
Product specification
Wideband variable gain amplifier
SA5209
DEFINITIONS
Data Sheet Identification
Objective Specification
Product Status
Formative or in Design
Definition
This data sheet contains the design target or goal specifications for product development. Specifications may change in any manner without notice. This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. This data sheet contains Final Specifications. Philips Semiconductors reserves the right to make changes at any time without notice, in order to improve design and supply the best possible product.
Preliminary Specification
Preproduction Product
Product Specification
Full Production
Philips Semiconductors and Philips Electronics North America Corporation reserve the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. LIFE SUPPORT APPLICATIONS Philips Semiconductors and Philips Electronics North America Corporation Products are not designed for use in life support appliances, devices, or systems where malfunction of a Philips Semiconductors and Philips Electronics North America Corporation Product can reasonably be expected to result in a personal injury. Philips Semiconductors and Philips Electronics North America Corporation customers using or selling Philips Semiconductors and Philips Electronics North America Corporation Products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors and Philips Electronics North America Corporation for any damages resulting from such improper use or sale. Philips Semiconductors 811 East Arques Avenue P.O. Box 3409 Sunnyvale, California 94088-3409 Telephone 800-234-7381 (c) Copyright Philips Electronics North America Corporation 1997 All rights reserved. Printed in U.S.A.
Philips Semiconductors
1997 Nov 07 17

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